• Growing Method: VGF
• Orientation: (100)
• Size: 5x5x0.5mm
• Polishing: one side polished
• Doping: Si doped
• Conductor type: S-C-N
• Carrier Concentration: (7.2-11.7) x 10^17 /cm^3
• Mobility: 2170-2650 cm^2/V.S
• EPD: <5000/cm^2
• resistivity: (2.56-3.55)x10^-3 ohm.cm • Ra(Average Roughness) : < 0.4 nm