GaAs single crystal wafer • Growing Method: VGF
• Orientation: (100)
• Size: 3" dia x 0.5mm
• Polishing: one side polished
• Doping: Zn doped
• Conductor type: S-C-P
• Carrier Concentration: (5.01-6.30) x 10^17 /cm^3
• Mobility: 1 184-200cm^2/V.S
• EPD: <5000/cm^2
• Resistivity: (5.14-6.67)x10^-2 ohm.cm
• Ra(Average Roughness) : < 0.4 nm
• Note: EPI ready wafers