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GaAs (110)
GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
- GaAs single crystal wafer
- • Growing Method: LEC
- • Orientation: (110)
- • Size: 2" dia x 2.8 mm
- • Polishing: As Cut
- • Doping: undoped
- • Conductor type: Semi-Insulating
- • Resistivity: >1 x 107 Ohm.cm
- • Mobility: 4500 cm 2/ V.S
- • Carrire Concentration: <1 x108 cm^-3
- • EPD: < 5x104/cm-2
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Working days : Monday to Saturday
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