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GaAs (110)
GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, 2sp
- • Growing Method:
- • Orientation: (110)
- • Flat: PF<110>
- SF <100>
- • Size: 5x5x5.5-5.6mm
- • Polishing: Two sides polished
- • Doping: un-doped
- • Conductor type: S-I
- • Mobility: 4800 cm^2/V.S
- • Resistivity :9x10^17 ohm.cm
- • Carrier Concentration: 1.3x10^7 cm^-3
- • EPD:1x10^4 cm^-2
- • Ra(Average Roughness) : < 5 Angstrom (RMS)
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Working days : Monday to Saturday
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