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GaAs (110)
GaAs, VGF Grown (110) ori. N type, Si-doped, 5 x 5 x 0.3 mm, 2sp
- GaAs single crystal wafer
- • Growing Method: VGF
- • Orientation: (110)
- • Size: 5 x 5 x 0.35 mm
- • Polishing: Two sides polished
- • Doping: Si-doped
- • Conductor type: S-C-N
- • Carrier Concentration: (2.4-3.27)x10E18/cm^3
- • Mobility: 1630-1870 cm^2/V.S
- • Resistivity :( 1.17-1.4)x10^-3 ohm.cm
- • Ra(Average Roughness) : < 0.4 nm
- • Note: EPI ready wafers
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Working days : Monday to Saturday
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