Specification
• Research Grade , about 90 % usable area
• GaN template, N+, 2” in diameter
• Nominal GaN Thickness: 5 um +/- 1um
• 2” in dia, N+(Si-doped)
• Concentration: ~1E18/cc
• Resistivities: < 0.02 Ohm-cm
• Front side surface: As grown
• Back side surface: Substrate as received
• Polarity: Ga-face
• Substrate:
• Sapphire Substrate, 2”. C-plane, 1.00 degree offcut toward a-plane direction,
• Single side polished, 430 um
• Growth method: HVPE (Hydride Vapor Phase Epitaxy)
• Please click here for the surface data.