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Doped GaN Template on Sapphire
Si-doped GaN (0001) Epitaxial Templates on Al2O3(0001), N-type, 2” x 4 micron, 2 sp. Concentration: >1E18/cc R < 0.05 Ohm-cm
Specification
• Research Grade , about 90 % usable area - • Dimension: Φ50.8 mm ± 0.1 mm (2 inch diameter)
- • Thickness: 4.0 ± 0.5 μm
- • Sapphire substrate thickness: 430 μm
- • Usable area: >90%
- • Orientation: C plane (0001) ± 0.5°
- • Orientation Flat: (1-100) ± 0.5°, 16.0 ± 1.0 mm
- • Secondary Orientation flat: (11-20) ± 3°, 8.0 ± 1.0 mm
- • Total Thickness Variation: <15 μm
- • Resistivity (300K): < 0.05 Ω·cm
- • Dislocation Density: < 5x108 cm-2
- • Carrier concentration: > 1x10^18 cm-3
- • Surface AFM RMS: < 0.5 nm
- • Substrate Structure: GaN/Sapphire (0001)
- • Growth method: HVPE (Hydride Vapor Phase Epitaxy)
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