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GaP Substrtaes (110)
GaP Wafer, undoped (110) 5x5x0.3 mm, 2sp
- GaP single crystal wafer
- • Size: 5x5x0.3 mm,
- • Doping: undoped,
- • Conducting type: N-type,
- • Orientation: (110)
- • Polished: Two sides Polished
- • Surface finish (RMS or Ra) : < 8A
| Typical Physical Properties | Crystal Structure | Cubic. a =5.4505 A | Growth Method | CZ (LEC) | Density | 4.13 g/cm3 | Melt Point | 1480 oC | Thermal Expansion | 5.3 x10-6 / oC | Dopant | S doped | undoped | Crystal growth axis | <111> or <100> | <100> or <111> | Conducting Type | N | N | Carrier Concentration | 2 ~ 8 x1017 /cm3 | 4 ~ 6 x1016 /cm3 | Resistivity | ~ 0.03 ohm-cm | ~ 0.3 ohm-cm | EPD | < 3x105 | < 3x105
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