InP single crystal wafer
• Growing Method: VGF
• Orientation: (100)
• Size: 2" diameter x 0.35 mm
• Doping: Zn doped
• Conducting type: S-C
• Polish: one side polished
• Resistivity: (3.13-3.49)E-2 ohm.cm
• Mobility: 58-59 cmE2/V.S
• EPD: <5000 /cmE2
• Carrier Concerntration: (3.12-3.41) E18 /cm^3
• Ra(Average Roughness) : < 0.4 nm
• EPI ready surface and packing