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Thermal Oxide Wafer 3" Dia.
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t,undoped N type, 1SP R:>1000 ohm.cm
- •Research Grade , about 80 % useful area
•SiO2 layer on 3" Silicon wafer
•Oxide layer thickness: 300 nm (2000 A) +/-10%
•Growth method - Dry oxidizing at 1000oC
•Refractive index - 1.455
•Note: customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- N-ype/ un-dped
- Size
- 3"diameter +/- 0.5 mm x 0.5 mm
- Optional
- you may need tool below to handle the wafer ( click picture to order )
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