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InSb undoped
InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished
InSb substrate 10x10x0.5 mm (N type, undoped)
• Size: 10x10x0.5 mm • Orientation <100> +/-0.5o • Polishing: one-side side polished ( back side etched ) • Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
• Growth method LEC • Orientation (100) +/- 0.5o • Doping Undoped • Conductivity type N type • Carrier Concentration (0.1- 0.85)E15 @77K • Mobility (5.0-3.5)E5 cm2/Vs • EPD <200 / cm 2
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