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InSb undoped
InSb (100) 5x5x 0.5mm, Undoped, N type, 2 sides polished
InSb substrate (N type, undoped) 2sp
Properties
• Growth method LEC • Orientation (100) +/- 0.5o • Doping Undoped • Conductivity type N type • Carrier Concentration (2-7)E14 @77K • Mobility 4E4 cm2/Vs • EPD <300 / cm 2
Optional you may need tool below to handle the wafer ( click picture to order )
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Working days : Monday to Saturday
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