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InSb undoped
InSb (111)A 2" dia x 0.5 mm, Undoped, N type, one side polished
2" InSb wafer (N type, undoped)
• Size: 2" dia x 0.5mm thick • Orientation <111> +/-0.5o with two reference flats • Polishing: one side polished ( back side etched ) • Packing: Sealed under nitrogen with single wafer container in 1000 class clean room
Properties
• Growth method LEC • Orientation (111)A +/- 0.5o • Orientation Flat • Doping Undoped • Conductivity type N type • Carrier Concentration <2E14 @77K • Mobility >4E4 cm^2/V.s • EPD <500 cm^-2
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