LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high
     Tc superconductors, magnetic and ferro-electric thin films.
     The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance  applications.

   Substrate Specifcations:

•      •  Wafer Size:   20 x 20 x  0.5 mm thickness +/-0.05 mm,
•      •  Wafer Orientation:   (100) +/-0.5 Deg
•      •  Polishing:   One side CMP polished with free sub-surface damaged.
•      •  Surface finish (RMS or Ra) :  < 10A
•      •  Package:    Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
•      •  Warning: LaAlO3 crystal  has a visible twin on a polished surface,
          which is normal nature .
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Typical Physical Properties

Crystal Structure

Rhombohedral at 25 ^oC:    a=5.357 Angstroms  c= 13.22 Angstroms Cubic at > 435 ^oC :    a=3.821 Angstroms

Growth Method

Czochralski

Density

6.52   g/cm³

Melt Point

2080 ^oC        

Thermal expansion

 10 (x10^-6/ ^oC)

Dielectric Constant

~ 25

Loss Tangent at 10 GHz

~3x10^-4 @ 300K ,       ~0.6 x10^-4 @77K

Color and Appearance

Transparent to Brown based on annealing condition.

Chemical Stability

Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC