LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Substrate Specifcations:
• Wafer Size: 2" dia +/- 0.5 mm x 1.0 thickness +/-0.05 mm
• Wafer Orientation: (100) +/-0.5 Deg
• Edge Orientation: <001> +/-1 Deg with 16 mm Length
• Polishing: CMP polished with free sub-surface damaged
• Surface finish (RMS or Ra) : < 10A
• Package: Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.
• Warning: LaAlO3 crystal has a visible twin on a polished surface, which is normal nature.