LaAlO₃ single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high
     Tc superconductors, magnetic and ferro-electric thin films.
     The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.

   Substrate Specifcations:

•      •  Wafer Size:    3" dia +/- 0.5 mm   x  0.5 thickness +/-0.05 mm
•      •  Wafer Orientation:   (100) +/-0.5 Deg
•      •  Edge Orientation:   <001> +/-1 Deg with 22 mm +/- 2 mm Length
•      •  Polishing:   CMP polished with free sub-surface damaged
•      •  Surface finish (RMS or Ra) :  < 10A
•      •  Package:    Under 1000 class clean room, and in 100 grade plastic bag in a wafer container.

•      •  Warning: LaAlO3 crystal  has a visible twin on a polished surface,
          which is normal nature.
  
  
•      •  For detailed physical properties of LaAlO3 crystal, please click here
•      •  For typical crystal rocking curve, please click here
•      •  For MSDS, please click here
•      •  For the AFM of LaAlO3, please click here.
•      •  If you need a certificate of analysis, please click here
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Typical Physical Properties

Crystal Structure

Cubic    a=3.79 Angstroms

Growth Method

Czochralski

Density

6.52   g/cm³

Melt Point

2080 ^oC        

Thermal expansion

 10 (x10^-6/ ^oC)

Dielectric Constant

~ 25

Loss Tangent at 10 GHz

~3x10^-4 @ 300K ,       ~0.6 x10^-4 @77K

Color and Appearance

Transparent to Brown based on annealing condition.

Chemical Stability

Insoluble in mineral acids at 25 ^oC and soluble in H3PO3 at> 150 ^oC