| |
Si 4" N-type Doped
Si Wafer (111), 4 " dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 - 25,000 ohm-cm (부가세 별도)
- Specification
- • Single Crystal: Si
- • Growth Method: FZ (Floating Zone)
- • Type/Dopant: N/Phosphorus
- • Orientation: (111)
- • Resistivity: 15,000 - 25,000 ohm-cm
- • Diameter: 100 mm +/- 0.5 mm
- • Thickness: 0.3 mm +/- 0.025 mm
- • Primary Flat: <110>
- • Polish: One side polished
• Optional: you may need tool below to handle the wafer ( click picture to order )
|
|
|
Working days : Monday to Saturday
|
|
|
