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Si 4" N-type Doped
Si Wafer (111)with 4 deg. off, 4 " dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm (부가세 별도)
- Specification
- • Single crystal Si, (CZ)
- • Conductivity: N type ( P doped)
- • Resistivity: 1-10 ohm-cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.) - • Size: 4" diameter x 0.525 mm
- • Orientation: (111)with 4 deg. off,
- • Polish: One side polished
- • Surface roughness: < 5A
• Optional: you may need tool below to handle the wafer ( click picture to order )
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Working days : Monday to Saturday
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