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Si 4" P-type Doped
Si Wafer (100), 4 " dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm (부가세 별도)
- Specification
- • Single crystal Si
- • Conductivity: P type ( B doped)
- • Resistivity: >200 ohm-cm
- • Size: 4" diameter x 0.525 (+/- 0.025) mm
- • Orientation: (100) +/- 1.0 deg
- • Polish: One side polished
- • Surface roughness: < 5A
Optional: you may need tool below to handle the wafer ( click picture to order )
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Working days : Monday to Saturday
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