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Thermal Oxide Wafer 3" Dia.
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 3"dia x 0.50 mm t, N-type ,P-doped 1SP R:1-10 ohm.cm-1
- •Research Grade , about 80 % useful area
•SiO2 layer on 3" Silicon wafer
•Oxide layer thickness: 300 nm (3000 A) +/-10%
•Growth method - Dry oxidizing at 1000oC
•Refractive index - 1.455
- Silicon Wafer Specifications
- Conductive type
- N-type/ P-dped
- Size
- 3" +/- 0.5 mm in diameter x 0.5 mm +/- 0.05 mm th
- Surface roughness
- < 5A (RMS)
- Optional
- you may need tool below to handle the wafer ( click picture to order )
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