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New substrate
SiO2+TiO2+Pt (111) Film on Si ,4"x0.525mm, 1sp P-type B-doped, (SiO2=300nm,TiO2=20nm ,Pt(111)=150nm)
Silicon Wafer Specifications:
• Film: SiO2+TiO2+Pt(111) thin film on Si (100) (P-type) substrate ,4"x0.525mm,1sp
º SiO2=300nm º TiO2=20nm º Pt(111)=150nm
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Working days : Monday to Saturday
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