| |
Aluminum on Silicon Wafer
Aluminum Film on Silicon Wafer , 3 microns / 4" -- Al-Si-100-3um ,Si(100) P-type B-doped R:1-20 ohm.cm
- Film coated by E-beam evaporation under vacuum below 10-6 torr
- evaporation rate
- 0.2 nanometer per second
- Aluminum Thickness
- 3 microns
- Film Resistivity
- 2.65 micro ohm-cm
- Film Crystallinity
- Weak (111) - oriented polycrystals
- Roughness, RMS
- 4.87 nm and < 10 nm
- Silicon Wafer Specifications
- Conductive type
- Si P- type, B-doped
- Size
- 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th
- Orientation
- (100) +/- 0.5o
- Polish
- One sides polished
- Packing
- Vacuum packed on a 4" single wafer carrier
- Optional : you may need tool below to handle the wafer
|
