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Aluminum on Silicon Wafer
Aluminum Film on Silicon Wafer, Al: 300 nm, Si(100) P-type R:1-20 ohm.cm
- Film Deposition by DC Sputtering
- evaporation rate
- Aluminum Thickness: 300 nm
- Aluminum Thickness
- <= 4 Ohm-cm
- Film Resistivity
- 2.65 micro ohm-cm
- Film Crystallinity
- Weak (111) - oriented polycrystals
- Silicon Wafer Specifications
- Conductive type
- Si P- type, B-doped
- Size
- 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm thick
- Orientation
- (100) +/- 0.5o
- Polish
- One sides polished
- Optional : you may need tool below to handle the wafer
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