| |
AlGaN Template on Sapphire
Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), GaN: Si doped N- type, , 10x10x0.5mm thickness:200nm+/- 20nm, Production Grade
Al(0.1)Ga(0.9)N Epitaxial Template on Sapphire (C plane), N- type,doping ,~5x10^17, , 2"diameter,Norminal Al(0.1)Ga(0.9)N thickness:200nm+/- 20nm, Production Grade
Specifications
• Size: 10mmx10mmx0.5mm
• Al(0.1)Ga(0.9)N thickness: 200nm+/- 20nm
• Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
• Conduction Type: N-type,
- • Sapphire/GaN:Nid/GaN:Si
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
Related data
|
