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Silicon Nitride film on Silicon Wafer
100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm
Silicon Nitride Film
- • Si3N4 Film coated by low stress PE-CVD method
- • Si3N4 Thickness: 100nm +/- 8%
- • Si3N4 covers front polished side of Silicon wafer ONLY
- • Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm
Silicon Wafer Specifications:
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