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Silicon Nitride film on Silicon Wafer

 
  2. Thin Film on Substrates: A-Z
  3. Silicon Nitride film on Silicon Wafer
 
 
300 nmSilicon Nitride Film (LPCVD) on Si(100)N-type ,P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm (부가세 별도)

300 nmSilicon Nitride Film (LPCVD) on Si(100)N-type ,P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm (부가세 별도)

기본 정보
Product Name 300 nmSilicon Nitride Film (LPCVD) on Si(100)N-type ,P-doped 100 mm dia .x0.525mm thick, 1sp,R:1-20 ohm.cm (부가세 별도)
Sale Price 290,000원
Product Code FmSi3N4onSiPa100D0525C1FT300
Quantity 수량증가수량감소
상품 옵션
 

Silicon Nitride Film

  •      •  Si3N4 Film coated by low stress LPCVD method
  •      •  Si3N4 Thickness:   300 nm  +/- 10%
  •      •  Si3N4 covers both side of Silicon wafer
  •      •  Refractive Index of Si3N4: 1.95 - 2.05

Silicon Wafer Specifications:

  •      •  Conductive type:  Si   N- type, P-doped
  •      •  Resistivity: 1-20 ohm-cm
  •      •  Size: 4" diameter +/- 0.5 mm x  0.525 +/- 0.025 mm th
  •      •  Orientation: (100) +/- 0.5o
  •      •  Polish: One  sides  polished
  •      •  Surface roughness:     Prime
  •      •  Packing:  Vacuum packed on a 4" single wafer carrier box

  •      •  Optional:  you may need tool below to handle the wafer ( click picture to order )
 
  

    Working days : Monday to Saturday

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