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Round Al2O3 (0001) Wafer 10mm, 1" - 4"
Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Wafer size
- 1" dia x 0.5 mm thickness
- (0001) C plane orientation +/- 0.5 Deg
- Polished surface
- One side epi polished by special CMP technology.
- Surface roughness
- Ra < 5 A (by AFM)
- Package
- Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container.
- Crystal Structure
- Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point
- 2040 degree C
- Thermal Expansion
- 7.5 x 10-6 (/ oC)
- Thermal Conductivity
- 46.06 @ 0 oC
25.12 @ 100 oC,
12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant
- ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz
- < 2 x 10-5 at A axis ,
< 5 x 10-5 at C axis
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