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Round Al2O3 (0001) Wafer 10mm, 1" - 4"
Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP
- 99.996% High Purity, Monocrystalline Al2O3
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Orientation
- C-axis[0001]( +-0.3o ) with Standard Flat
- Diameter
- 76.2 mm +/- 0.1 mm
- Thickness
- 500 um +/- 25 um
- Major Flat
- A-axis[11-20] +/- 0.2o
- Major Flat Length
- 22 mm +/- 1.0 mm
- Surface Finish
- Front sides : Epi- polished Ra < 0.5 nm (by AFM)
- Polished surface
- One side epi polished by special CMP technology.
- Package
- Each wafer is packed in 1000 class clean room .
- Crystal Structure
- Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point
- 2040 degree C
- Thermal Expansion
- 7.5 x 10-6 (/ oC)
- Thermal Conductivity
- 46.06 @ 0 oC
25.12 @ 100 oC,
12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant
- ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz
- < 2 x 10-5 at A axis ,
< 5 x 10-5 at C axis
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