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Round Al2O3 (0001) Wafer 10mm, 1" - 4"
Al2O3 - Sapphire Wafer <0001> 2"dia x 0.43mm 1SP
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films.
- Orientation
- C-axis[0001] with -0.2o off toward M-axis
- Orientation
- C-axis[0001] +-0.5o
- Diameter
- 50.8mm +/- 0.1mm
- Thickness
- 430um +/- 15 um
- Major Flat
- A-axis[11-20] +/-0.2o
- Major Flat Length
- 16 mm +/- 1.0 mm
- Surface Finish
- Front sides : Epi- polished Ra < 0.2 nm (by AFM)
- Polished surface
- One side epi polished by special CMP technology.
- Package
- Each wafer is packed in 1000 class clean room
- Crystal Structure
- Hexagonal. a=4.758 Angstroms c=12.99 Angstroms,
- Melting Point
- 2040 degree C
- Thermal Expansion
- 7.5 x 10-6 (/ oC)
- Thermal Conductivity
- 46.06 @ 0 oC
25.12 @ 100 oC,
12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant
- ~ 9.4 @ 300K at A axis ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz
- < 2 x 10-5 at A axis ,
< 5 x 10-5 at C axis
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