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InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp
- InAs (511), S doped ellipse shape wafer (area >30mm dia) 1sp
- Orientation
- (511) ± 0.5 Deg
- Carrier Concentration
- < 7E17 ~ 1E18 / cm3
- Standard thickness
- 500 ± 20 mm
- Size
- ellipse shape, (area > 30mm diameter)
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