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Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm,1sp
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition
Substrate:
- • N-type S doped InP [100]±0.5°, Nc=~5E18/cc
- • Wafer Size: 3" diameter
- • Thickness:650+/- 25um
- • One side polished, backside etched, US Flats
EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/ccEPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc
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Working days : Monday to Saturday
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