MTI KOREA Battery
Battery R & D
- Coin Cell Preparation
- Cylindrical and Prismatic Cell Preparation
- Pouch Cell Preparation
- Battery Test Equipment
- Consumables for Battery R&D Synthesis
- Thermoelectric Materials
- Zinc-Ion Batteries
Crystal & Material
Crystals Substrates : A-Z
Ceramic Substrates : A-Z
Thin Film on Substrates : A-Z
Metallic substrate :A to Z
Nano Powder&Chemical
Target / Evaporation : A-Z
Thermal Processing
Smart Furnaces
- Muffle Furnaces (400-1800°C)
- Tube Furnaces (1- 7 Zones)
- CVD Furnace System
- Hi-Pressure & H2 Gas Furnaces & Hot Pressing
- RTP Furnaces
- Crystal Growth System
- Dry Ovens / Hot Plates
- Melting and Casting
Furnace Accessories
Plasma System
Plasma Sputtering & Cleaning
PECVD
Microspheres-Nanospheres
Inorganic
Organic
Magnetic
Radioactive
Size Standards
Sample Preparation & Analysis
Cutting / Dicing Saws
Polishing Machines
Lab Press & Rollers
Power & Slurry Mill / Mixer
Film Coating
Desktop Machine-shop
Material Analysis
TGA Analysis
Battery / Capacitor Analyzers
Desk-Top X-Ray Instruments
Digital Microscopes
Other Lab Equipment
Glove Box & Fume Hood
Digital Lab Balances
Plasma/UV-Zone Cleaners
Ultrasonics/Water Circulator
UV Equipment & Adhesives
Lab Ware / Accessory
Sample Handling
Gel Sticky Boxes
Membrane Film Boxes
Round Wafer Carriers
IC Tray & Plastic Boxes
Vacuum Pen & Tweezers
Knowledge Center
등록 제품 : 10개
-조건선택- -조건선택-
상품명 : Thermal Oxide Wafer: 500 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N-type ,P doped 1sp ,0.01-0.1 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.50 mm t, N type, 1SP R:1-10 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N-type, P doped 1sp, R: 1-10 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type,P doped 1SP R: 0.1-1.0 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 285nm SiO2 Layer on Si (100)( one side), 4"diax0.5 mm t, N type P doped，1SP R: 1-10 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm , N type , P doped, 1SP R: 0.1-1.0ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 300nm SiO2 Layer on Si (100), 4"diax0.5mm t, N-type ,Sb-doped 1SP R:0.01- 0.02 ohm-cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type ,Sb-doped 1SP R:0.01- 0.02 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 4"dia x 0.525 mm, N type ,As-doped 1SP, R< 0.005 ohm.cm (부가세 별도)
상품명 : Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, N type ,As-doped 1SP ,R:0.001-0.005 ohm.cm (부가세 별도)
