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Thermal Oxide Wafer 2" Dia.
Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (100), 2" dia x 0.275 mm t, P type B doped, 1 side polished, R:<0.2-0.4 ohm.cm
- Research Grade , about 80 % useful area
- SiO2 layer on 2" Silicon wafer
- Oxide layer thickness
- 300 nm ( 3000A ) +/-10%
- Note
- customized oxide layer available upon request from 50 nm - 1000 nm
- Silicon Wafer Specifications
- Conductive type
- P type/ Boron doped
- Size
- 50.8 diameter +/- 0.5 mm x 0.275 +/- 0.025 mm
- Surface roughness, Ra
- < 5A (RMS)
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