|
< 2" Thermal Oxide Wafer
Thermal Oxide Wafer: 50nm SiO2 on Si (100), 10x10 0.5 mm, N type P-doped 1SP, R:0.01-0.05 ohm.cm
Thermal oxide Layer
- • SiO2 layer on Silicon wafer
- • Oxide layer thickness: 50 nm ( 500A) +/-10%
- • Refractive index - 1.455
Silicon Wafer Specifications
- • Conductive type: N-type/ P-dped
- • Resistivity: 0.01-0.05 ohm.cm
(If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) - • Size: 10 x 10 x 0.5 mm
- • Orientation: (100) +/- 1o
- • Polish: one side polished
- • Surface roughness, Ra: < 5A (RMS)
|
|
|
Working days : Monday to Saturday
|
|
|