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< 2" Thermal Oxide Wafer
Thermal Oxide Wafer: 100 nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type, As-doped, 1SP, R: 0.001-0.005 ohm.cm
Thermal oxide Layer
- • SiO2 layer on Silicon wafer
- • Oxide layer thickness: 100 nm ( 1000A) +/-10%
- • Refractive index - 1.455
Silicon Wafer Specifications
- • Conductive type: N-type/ As-dped
- • Resistivity: 0.001-0.005 ohm.cm
(If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity
Testing Instrument.) - • Size: 10 x 10 x 0.5 mm
- • Orientation: (100) +/- 1o
- • Polish: one side polished
- • Surface roughness, Ra: < 5A (RMS)
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Working days : Monday to Saturday
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