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SOS (silicon on Sapphire)

 
  2. Thin Film on Substrates: A-Z
  3. SOS (silicon on Sapphire)
 
 
Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick

기본 정보
Product Name Silicon-on-Sapphire (11-02, R Plane ), 10mmx 10mmx0.46mm,2sp, Film: 1.0 um thick
Sale Price Call for Price
Product Code FmSOS1010046S2FT10US
Quantity 수량증가수량감소
상품 옵션
 

  •      Silicon on sapphire (SOS) is a     hetero-epitaxialprocess for integrated
         circuit    manufacturing that consists of a thin layer (typically thinner than
         0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is
         part of the Silicon on Insulator (SOI) family of CMOS technologies.
         SOS is primarily used in aerospace and military applications because
         of its inherent resistance to radiation.


         Materials:  Silicon on Sapphire
     
         Silicon EPI Layer:

    •           •  Silicon Orientation: (100)
    •           •  Type, Dopant:  Intrinsic type, undoped
    •           •  Silicon Thickness: 1.0 um +/- 10%
    •           •  Resistivity: > 100 ohm.cm
    •           •  Micro-particle density ( for particles > 2 um) < 2/cm^2
  •  
    •      Sapphire Wafer:

    •           •  R plane -- (1-102)  with  single flat
    •           •  Wafer size: 10x10 x 0.46 mm thickness 
    •           •  Front surface: Epi-polished (Ra < = 0.3 nm)
    •           •  Back surface: Optical grade polish
    •           •  TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um





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