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SOS (silicon on Sapphire)

 
  2. Thin Film on Substrates: A-Z
  3. SOS (silicon on Sapphire)
 
 
Silicon-on-Sapphire (11-02, R Plane ), 10mmx10mm x0.5mm,,1sp film: 0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 10mmx10mm x0.5mm,,1sp film: 0.6um thick

기본 정보
Product Name Silicon-on-Sapphire (11-02, R Plane ), 10mmx10mm x0.5mm,,1sp film: 0.6um thick
Sale Price Call for Price
Product Code FmSOS1010046S1FT06US
Quantity 수량증가수량감소
상품 옵션
 

  •      Silicon on sapphire (SOS) is a     hetero-epitaxialprocess for integrated
         circuit    manufacturing that consists of a thin layer (typically thinner than
         0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is
         part of the Silicon on Insulator (SOI) family of CMOS technologies.
         SOS is primarily used in aerospace and military applications because
         of its inherent resistance to radiation.


         Materials:  Silicon on Sapphire
     
         Silicon EPI Layer:

    •           •  Silicon Orientation: (100)
    •           •  Type, Dopant:  Intrinsic type, undoped
    •           •  Silicon Thickness: 0.6 um +/- 10%
    •           •  Resistivity: > 100 ohm.cm
    •           •  Silicon epi film on C plate sapphire is available upon request
  •  
    •      Sapphire Wafer:

    •           •  R plane -- (1-102)  with  single flat
    •           •  Wafer size: 10x10 x 0.53 mm thickness 
    •           •  Polished surface:   Wafer surface is one side EPI polished  ( 1sp) via
                   a special CMP procedure.       
    •           •  One side polished





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