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SOS (silicon on Sapphire)

 
  2. Thin Film on Substrates: A-Z
  3. SOS (silicon on Sapphire)
 
 
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick

기본 정보
Product Name Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:0.6um thick
Sale Price Call for Price
Product Code FmSOS0505046S2FT06US
Quantity 수량증가수량감소
상품 옵션
 

  •      Silicon on sapphire (SOS) is a     hetero-epitaxialprocess for integrated
         circuit    manufacturing that consists of a thin layer (typically thinner than
         0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is
         part of the Silicon on Insulator (SOI) family of CMOS technologies.
         SOS is primarily used in aerospace and military applications because
         of its inherent resistance to radiation.


         Materials:  Silicon on Sapphire
     
         Silicon EPI Layer:

    •           •  Silicon Orientation: (100)
    •           •  Type, Dopant:  Intrinsic type, undoped
    •           •  Silicon Thickness: 0.6 um +/-10%
    •           •  Resistivity: > 100 ohm.cm
    •           •  Micro-particle density ( for particles > 2 um) < 2/cm^2
  •  
    •      Sapphire Wafer:

    •           •  R plane -- (1-102)  with  single flat
    •           •  Wafer size: 5x5 x 0.46 mm thickness 
    •           •  Front surface: Epi-polished (Ra < = 0.3 nm)
    •           •  Back surface: Optical grade polish
    •           •  TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um





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