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SOS(Silicon on Sapphire) Wafers (DSP-Double sides polished)
Silicon EPI Layer
• Silicon Orientation: (100)
• Type, Dopant: Intrinsic type, undoped
• Silicon Thickness: 0.6 um +/- 10%
• Resistivity: > 100 ohm.cm
• Micro-particle density ( for particles > 2 um) < 2/cm^2
Sapphire Wafer
• R plane -- (1-102) with single flat Purity: 99.996%
• Wafer size: 100 mm dia x 0.46 mm thickness
• Flat : One flat 32.5mm +/-2.5mm, at 45+/- 1 deg CCW from <C> on <R>
• Front surface: Epi-polished (Ra < = 0.3 nm)
• Back surface: Optical grade polish
• TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um, with Laser Mark on wafer back-side, just below the Flat